Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor
نویسندگان
چکیده
منابع مشابه
Transport Simulation of a Nanoscale Silicon Rod Field-Effect Transistor
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb[1] semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique tha...
متن کاملTransport spectroscopy of coupled donors in silicon nano-transistors
The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom-based transistors. So far, most studies...
متن کاملA Single-Transistor Silicon Synapse
We have developed a new floating-gate silicon MOS transistor for analog learning applications. The memory storage is nonvolatile; hot-electron injection and electron tunneling permit bidirectional memory updates. Because these updates depend on both the stored memory value and the transistor terminal voltages, the synapse can implement a learning function. We have derived a memory-update rule f...
متن کاملPhosphorus donors in highly strained silicon.
The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si(1-x)Ge(x) substrates with x< or =0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density function...
متن کاملPerformance Simulation of Nanoscale Silicon Rod Field-Effect Transistor Logic
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RGFET) using the PISCES-IIb[1] semiconductor driftdiffusion solver. The results from these simulations are used by a customized SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a selfassembling fabrication technique t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nano Letters
سال: 2009
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl901635j